View 2N7002P_4585751.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2N7002P
60 V, 0.3 A N-channel Trench MOSFET
Rev. 01 -- 19 April 2010 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified
1.3 Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance Tamb = 25 C; VGS = 10 V Tj = 25 C; VGS = 10 V; ID = 500 mA Conditions 25 C Tj 150 C Min Typ 1 Max 60 20 300 1.6 Unit V V mA
NXP Semiconductors
2N7002P
60 V, 0.3 A N-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 Pinning Symbol G S D Description gate source drain
1 2
mbb076
Simplified outline
3
Graphic symbol
D
G S
3. Ordering information
Table 3. Ordering information Package Name 2N7002P Description Version SOT23 TO-236AB plastic surface-mounted package; 3 leads Type number
4. Marking
Table 4. 2N7002P
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
Marking codes Marking code[1] LW*
Type number
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Parameter drain-source voltage gate-source voltage drain current VGS = 10 V Tamb = 25 C Tamb = 100 C IDM peak drain current Tamb = 25 C; single pulse; tp 10 s 300 180 1.2 mA mA A Conditions 25 C Tj 150 C Min Max 60 20 Unit V V
2N7002P_1
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 19 April 2010
2 of 16
NXP Semiconductors
2N7002P
60 V, 0.3 A N-channel Trench MOSFET
Table 5. Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter total power dissipation Conditions Tamb = 25 C Tsp = 25 C Tj Tamb Tstg IS ISM junction temperature ambient temperature storage temperature source current peak source current Tamb = 25 C Tamb = 25 C; single pulse; tp 10 s -55 -65 [1] [2]
Min -
Max 250 350 830 150 +150 +150 300 1.2
Unit mW mW mW C C C mA A
Source-drain diode
[1] [2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
120 Pder (%) 80
017aaa001
120 Ider (%) 80
017aaa002
40
40
0 -75
-25
25
75
125 175 Tamb (C)
0 -75
-25
25
75
125 175 Tamb (C)
P tot P der = ----------------------- x 100 % P tot ( 25C ) Fig 1. Normalized total power dissipation as a function of ambient temperature Fig 2.
ID I der = ------------------- x 100 % I D ( 25C ) Normalized continuous drain current as a function of ambient temperature
2N7002P_1
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 19 April 2010
3 of 16
NXP Semiconductors
2N7002P
60 V, 0.3 A N-channel Trench MOSFET
10 ID (A) 1
017aaa014
(1) (2)
10-1
(3) (4)
10-2
(5) (6)
10-3 10-1
1
10 VDS (V)
102
IDM = single pulse (1) tp = 100 s (2) tp = 1 ms (3) tp = 10 ms (4) tp = 100 ms (5) DC; Tsp = 25 C (6) DC; Tamb = 25 C; drain mounting pad 1 cm2
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6. Symbol Rth(j-a) Rth(j-sp)
[1] [2]
Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point Conditions in free air
[1] [2]
Min -
Typ 325 -
Max 500 350 150
Unit K/W K/W K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
2N7002P_1
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 19 April 2010
4 of 16
NXP Semiconductors
2N7002P
60 V, 0.3 A N-channel Trench MOSFET
103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.25 0.1 0.2 0.05 0.02 0.01 0
017aaa015
10
1 10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, standard footprint
Fig 4.
103 Zth(j-a) (K/W) 102
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa016
duty cycle = 1 0.75 0.5 0.33 0.25 0.1 0.2 0.05 0.02 0.01
10
0
1 10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, mounting pad for drain 1 cm2
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
2N7002P_1
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 19 April 2010
5 of 16
NXP Semiconductors
2N7002P
60 V, 0.3 A N-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics Tj = 25 C unless otherwise specified. Symbol V(BR)DSS VGS(th) IDSS Parameter Conditions Min 60 1.1 Typ 1.75 Max 2.4 Unit V V Static characteristics drain-source breakdown ID = 10 A; VGS = 0 V voltage gate-source threshold voltage drain leakage current ID = 250 A; VDS = VGS VDS = 60 V; VGS = 0 V Tj = 25 C Tj = 150 C IGSS RDSon gate leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V
[1]
[1]
1.3 1 -
1 10 100 2 1.6 -
A A nA mS
VGS = 5 V; ID = 50 mA VGS = 10 V; ID = 500 mA VDS = 10 V; ID = 200 mA
gfs
forward transconductance total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage
Pulse test: tp 300 s; 0.01.
0.2
Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf VSD
[1]
ID = 300 mA; VDS = 30 V; VGS = 4.5 V VGS = 0 V; VDS = 10 V; f = 1 MHz
-
0.5 0.1 0.3 30.2 6.6 3.8 3 4 10 5 0.88
0.6 50 20 20 1.3
nC nC nC pF pF pF ns ns ns ns V
VDD = 50 V; RL = 250 ; VGS = 10 V; RG = 6
-
Source-drain diode IS = 115 mA; VGS = 0 V 0.47
2N7002P_1
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 19 April 2010
6 of 16
NXP Semiconductors
2N7002P
60 V, 0.3 A N-channel Trench MOSFET
0.7 VGS = 4.5 V ID (A) 0.6 0.5
017aaa017
10-3 ID (A) 10-4
(1) (2)
017aaa018
4.0 V
3.5 V 0.4 0.3 0.2 2.75 V 0.1 2.5 V 0.0 0.0
(3)
3.0 V 10-5
10-6 1.0 2.0 3.0 VDS (V) 4.0 0 1 2 VGS (V) 3
Tamb = 25 C
Tamb = 25 C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values
Fig 6.
Output characteristics: drain current as a function of drain-source voltage; typical values
017aaa019
Fig 7.
Sub-threshold drain current as a function of gate-source voltage
10.0 RDSon () 7.5
6.0 RDSon () 4.0
017aaa020
(1)
(2)
5.0
(1)
2.0 2.5
(3) (4) (5) (2)
0.0 0.0
0.2
0.4
0.6
0.8 ID (A)
1.0
0.0 0.0
2.0
4.0
6.0
8.0 10.0 VGS (V)
Tamb = 25 C (1) VGS = 3.25 V (2) VGS = 3.5 V (3) VGS = 4 V (4) VGS = 5 V (5) VGS = 10 V
ID = 500 mA (1) Tamb = 150 C (2) Tamb = 25 C
Fig 8.
Drain-source on-state resistance as a function of drain current; typical values
Fig 9.
Drain-source on-state resistance as a function of gate-source voltage; typical values
2N7002P_1
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 19 April 2010
7 of 16
NXP Semiconductors
2N7002P
60 V, 0.3 A N-channel Trench MOSFET
1.0 ID (A) 0.8
(1)
017aaa021
2.4 a
017aaa022
(2)
1.8
0.6 1.2 0.4
0.6 0.2
0.0 0.0
1.0
2.0
3.0
4.0 5.0 VGS (V)
0.0 -60
0
60
120 180 Tamb (C)
VDS > ID x RDSon (1) Tamb = 25 C (2) Tamb = 150 C
R DSon a = ----------------------------R DSon ( 25C ) Fig 11. Normalized drain-source on-state resistance as a function of ambient temperature; typical values
102
017aaa024
Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values
3.0 VGS(th) (V) 2.0
(2)
017aaa023
(1)
C (pF)
(1)
(2)
10
(3) (3)
1.0
0.0 -60
0
60
120 180 Tamb (C)
1 10-1
1
10 VDS (V)
102
ID = 0.25 mA; VDS = VGS (1) maximum values (2) typical values (3) minimum values
f = 1 MHz; VGS = 0 V (1) Ciss (2) Coss (3) Crss
Fig 12. Gate-source threshold voltage as a function of ambient temperature
Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
2N7002P_1
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 19 April 2010
8 of 16
NXP Semiconductors
2N7002P
60 V, 0.3 A N-channel Trench MOSFET
5.0 VGS (V) 4.0
017aaa025
VDS ID VGS(pl)
3.0
2.0 VGS(th) 1.0 VGS QGS1 0.0 0.0 QGS2 QGD QG(tot)
003aaa508
QGS 0.2 0.4 QG (nC) 0.6
ID = 300 mA; VDD = 6 V; Tamb = 25 C
Fig 14. Gate-source voltage as a function of gate charge; typical values
1.2 IS (A) 0.8
Fig 15. Gate charge waveform definitions
017aaa026
(1)
(2)
0.4
0.0 0.0
0.4
0.8 VSD (V)
1.2
VGS = 0 V (1) Tamb = 150 C (2) Tamb = 25 C
Fig 16. Source current as a function of source-drain voltage; typical values
2N7002P_1
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 19 April 2010
9 of 16
NXP Semiconductors
2N7002P
60 V, 0.3 A N-channel Trench MOSFET
8. Test information
t1 t2
P t2 t1
duty cycle =
t
006aaa812
Fig 17. Duty cycle definition
2N7002P_1
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 19 April 2010
10 of 16
NXP Semiconductors
2N7002P
60 V, 0.3 A N-channel Trench MOSFET
9. Package outline
Plastic surface-mounted package; 3 leads SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC TO-236AB JEITA
EUROPEAN PROJECTION
ISSUE DATE 04-11-04 06-03-16
Fig 18. Package outline SOT23 (TO-236AB)
2N7002P_1 All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 19 April 2010
11 of 16
NXP Semiconductors
2N7002P
60 V, 0.3 A N-channel Trench MOSFET
10. Soldering
3.3 2.9 1.9
solder lands solder resist 3 1.7 2 solder paste 0.6 (3x) occupied area Dimensions in mm 0.5 (3x) 0.6 (3x) 1
sot023_fr
0.7 (3x)
Fig 19. Reflow soldering footprint SOT23 (TO-236AB)
2.2 1.2 (2x)
1.4 (2x) solder lands 4.6 2.6 solder resist occupied area Dimensions in mm 1.4
preferred transport direction during soldering 2.8 4.5
sot023_fw
Fig 20. Wave soldering footprint SOT23 (TO-236AB)
2N7002P_1
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 19 April 2010
12 of 16
NXP Semiconductors
2N7002P
60 V, 0.3 A N-channel Trench MOSFET
11. Revision history
Table 8. Revision history Release date 20100419 Data sheet status Product data sheet Change notice Supersedes Document ID 2N7002P_1
2N7002P_1
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 19 April 2010
13 of 16
NXP Semiconductors
2N7002P
60 V, 0.3 A N-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer's third party customer(s) (hereinafter both referred to as "Application"). It is customer's sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
12.3 Disclaimers
Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
2N7002P_1
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 19 April 2010
14 of 16
NXP Semiconductors
2N7002P
60 V, 0.3 A N-channel Trench MOSFET
13. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
2N7002P_1
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 -- 19 April 2010
15 of 16
NXP Semiconductors
2N7002P
60 V, 0.3 A N-channel Trench MOSFET
14. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 19 April 2010 Document identifier: 2N7002P_1

▲Up To Search▲

Price & Availability of 2N7002P

	To Download 2N7002P Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .